Thin film structures can reduce the cost of solar power by using inexpensive substrates and a lower quantity and quality of semiconductor material. Light trapping in thin film solar cells is very important for ensuring both the high absorption and the little photoactive material.
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Vertical silicon nanowire array solar cells on 20 and 8 um silicon absorber layers with different roughness factors.
Light trapping in silicon nanowire solar cells. However the resulting short optical path length and minority carrier diffusion length necessitates either a high absorption coefficient or excellent light trapping. Light trapping technology provides broad band and efficient light absorption enhancement that can boost the performance of thin film solar cells. By comparing the photovoltaic output characteristics of these different cells we show that longer nanowires lead to both increased recombination and higher absorption with the light trappingeffectdominatingfor8.
Light trapping structures can take various forms such as nanowires nanoholes and nanocones to enhance optical absorption as well allowing the radial configuration of pn junctions. Today the thickness of the standard silicon solar cells are still 160 180 m m thick. In simple silicon solar cells eg monopoly crystalline silicon light is only passed once through the active media resulting in minimal probability for trapping of the incoming light 8.
Semiconducting nanowire arrays have already been shown to have low reflective. Light trapping in silicon nanowire solar cells erik garnett and peidong yang department of chemistry university of california berkeley california 94720.
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